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NTE339

NTE
Part Number NTE339
Manufacturer NTE
Description Silicon NPN Transistor
Published May 9, 2014
Detailed Description NTE339 Silicon NPN Transistor RF Power Output Description: The NTE339 is a 12.5 volt epitaxial silicon NPN planar transi...
Datasheet PDF File NTE339 PDF File

NTE339
NTE339

Overview
NTE339 Silicon NPN Transistor RF Power Output Description: The NTE339 is a 12.
5 volt epitaxial silicon NPN planar transistor designed primarily for use in large− signal amplifier stages in industrial communications equipment operating at frequencies to 80MHz.
D Specified 12.
5 Volt, 50MHz Characteristics Output Power = 40 Watts Minimum Gain = 7.
5dB Efficiency = 50% Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector−Base Voltage, VCBO .
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48V Collector−Emitter Voltage, VCEO .
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24V .
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Emitter−Base Voltage, VEBO 4V Continuous Collector Current, IC .
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7A Total Device Dissipation (TC = +25°C), Ptot .
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100W Derate Above 25°C .
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571mW/°C Operating Junction Temperature, Tj .
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+200°C Storage Temperatures Range, Tstg .
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−65° to +150°C Thermal Resistance, Junction−to−Case, RthJC .
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1.
55°C/W Note 1.
This device is designed for RF operation.
The total device dissipation rating applies only when the device is operated as an RF amplifier.
Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter OFF Characteristics Collector−Emitter Breakdown Voltage Emitter−Base Breakdown Voltage Collector Cutoff Current ON Characteristics DC Current Gain Dynamic Character...


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