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BAS70S3

CYStech Electronics
Part Number BAS70S3
Manufacturer CYStech Electronics
Description Small Signal Schottky (double) diodes
Published May 21, 2014
Detailed Description CYStech Electronics Corp. Small Signal Schottky (double) diodes Spec. No. : C248S3 Issued Date : 2012.07.09 Revised Dat...
Datasheet PDF File BAS70S3 PDF File

BAS70S3
BAS70S3

Overview
CYStech Electronics Corp.
Small Signal Schottky (double) diodes Spec.
No.
: C248S3 Issued Date : 2012.
07.
09 Revised Date : Page No.
: 1/6 BAS70S3/BAS70AS3 BAS70CS3/BAS70SS3 Description Planar silicon Schottky barrier diodes encapsulated in a SOT-323 very small plastic SMD package.
Single diodes and double diodes with different pinning are available.
Features •Guard ring protected •Low forward voltage drop •Very small plastic SMD package •Pb-free package Applications •Ultra high-speed switching •Voltage clamping •Protection circuits •Blocking diodes Pinning Pin 1 2 3 BAS70 A NC K 3 1 2 1 Outline Description BAS70A BAS70C K1 A1 K2 A2 A1,A2 K1,K2 3 2 BAS70S A1 K2 K1,A1 SOT-323 3 1 2 N.
C.
(1) BAS70 3 1 2 1 (2)BAS70A 3 2 Marking: Type BAS70 S3 BAS70AS3 BAS70CS3 BAS70SS3 Marking Code K73 K76 K75 K74 (3)BAS70C (4)BAS70S Diode configuration and symbol BAS70S3/BAS70AS3/BAS70CS3/BAS70SS3 C YStek Product Specification http://www.
Datasheet4U.
com CYStech Electronics Corp.
Absolute Maximum Ratings Symbol Per diode VR IF IFRM Ptot Tstg Tamb Parameter continuous reverse voltage continuous forward current repetitive peak forward current total power dissipation (per package) storage temperature operating ambient temperature Conditions Spec.
No.
: C248S3 Issued Date : 2012.
07.
09 Revised Date : Page No.
: 2/6 Min -65 -55 Max 70 70 100 200 +150 +125 Unit V mA mA mW ℃ ℃ tp≤1s, δ≤0.
5 Tamb≤25℃ Characteristics (Ta=25°C, unless otherwise specified) Parameter Reverse Breakdown Voltage Forward Voltage (Note 1) Reverse Leakage Current (Note 1) Diode Capacitance Reverse Recovery Time Symbol VBR VF(1) VF(2) IR CD trr IR=10μA IF=1mA IF=15mA VR=50V VR=0V, f=1MHz when switched from IF= 10mA to IR=10mA; RL=100Ω; measured at IR=1mA Condition Min.
70 Max.
410 1000 100 2 5 Unit V mV mV nA pF ns Notes: 1.
pulse test, tp=300μs, duty cycle<2%.
Thermal Characteristics Symbol Rth j-a Parameter thermal resistance from junction to ambient Conditions note 1 Value 625 Unit K/W Note 1 : ...


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