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2SB649AM

NELL SEMICONDUCTOR
Part Number 2SB649AM
Manufacturer NELL SEMICONDUCTOR
Description Bipolar General Purpose PNP Power Transistor
Published May 25, 2014
Detailed Description SEMICONDUCTOR 2SB649AM Series RoHS RoHS Nell High Power Products Bipolar General Purpose PNP Power Transistor -1.5A ...
Datasheet PDF File 2SB649AM PDF File

2SB649AM
2SB649AM


Overview
SEMICONDUCTOR 2SB649AM Series RoHS RoHS Nell High Power Products Bipolar General Purpose PNP Power Transistor -1.
5A / -120V, -160V / 20W 8.
0±0.
5 0º Ø3.
1 º 0 +0.
15 - 0.
1 2.
7± 0.
4 12 12 2.
3±0.
3 12 º 0 1.
1 TO-126 APPLICATIONS Low frequency power amplifier complementary pair with 2SD669AM/2SD669AM-A 0.
8 2.
29±0.
5 2.
29±0.
5 0.
55 1.
2 15.
6±0.
5 1(E) 3 (B) 2 (C) 3.
7±0.
7 11.
0±0.
5 C E C B B E PNP All dimensions in millimeters ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO V CEO V EBO I C(peak) IC PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current T C = 25 °C PC Collector power dissipation T A = 25 °C Tj T stg Junction temperature Storage temperature 1 150 ºC -55 to 150 VALUE 2SB649AM -180 -120 -5 -3 A -1.
5 20 W 2SB649AM-A -180 -160 V UNIT http://www.
Datasheet4U.
com www.
nellsemi.
com Page 1 of 4 SEMICONDUCTOR 2SB649AM Series RoHS RoHS Nell High Power Products ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL V (BR)CBO PARAMETER Collector to base breakdown voltage CONDITIONS I C = -1mA, l E = 0 2SB649AM V (BR)CEO Collector to emitter breakdown voltage I C = -10mA, R BE = ∞ 2SB649AM-A V (BR)EBO I CBO Emitter to base breakdown voltage Collector cutoff current I E = -1mA, I C = 0 V CB = -160V, I E = 0 2SB649AM h FE1 DC current transfer ratio (Note1) h FE2 V CE(sat) V BE fT C ob Collector to emitter saturation voltage Base to emitter voltage Transition frequency ( gain bandwidth product) Collector output capacitance V CE = -5V, l C = -500 mA l C = -0.
5A, l B = -50mA V CE = -5V, l C = -150mA V CE = -5V, l C = -150 mA V CB = -10V, l E = 0, f test =1MHz 140 27 V CE = -5V, l C = -150 mA 2SB649AM-A 60 30 -1.
0 V -1.
5 MHz pF 200 60 -160 -5 -10 320 µA min -180 -120 V typ max UNIT Note: 1.
Pulse test.
CLASSIFICATION OF hFE1 RANK 2SD669AM 2SD669AM-A B 60 to 120 60 to 120 C 100 to 200 100 to 200 D 160 to 320 Fig.
1 Maximum collector dissipation curve 30 -3 Fig.
2 Area of safe operat...



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