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K1095

Hitachi Semiconductor
Part Number K1095
Manufacturer Hitachi Semiconductor
Description 2SK1095
Published Jun 5, 2014
Detailed Description www.DataSheet4U.com 2SK1095 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • •...
Datasheet PDF File K1095 PDF File

K1095
K1095

Overview
www.
DataSheet4U.
com 2SK1095 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 12 3 1 1.
Gate 2.
Drain 3.
Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 60 ±20 25 100 25 30 150 –55 to +150 Unit V V A A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C http://www.
Datasheet4U.
com DataSheet 4 U .
com www.
DataSheet4U.
com 2SK1095 Table 2 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 60 Typ — Max — Unit V Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V * ID = 15 A, VGS = 10 V * ——————————————————————————————————————————— ——————————————————————————————————————————— ±20 — — V ——————————————————————————————————————————— — — 1.
0 — — — — 0.
033 0.
05 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time...


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