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P1806

ST Microelectronics
Part Number P1806
Manufacturer ST Microelectronics
Description STP1806
Published Jun 19, 2014
Detailed Description N-CHANNEL 60V - 0.015 W - 50A TO-220 STripFET™ POWER MOSFET TYPE STP1806 ■ ■ ■ STP1806 VDSS 60 V RDS(on) < 0.018 W I...
Datasheet PDF File P1806 PDF File

P1806
P1806

Overview
N-CHANNEL 60V - 0.
015 W - 50A TO-220 STripFET™ POWER MOSFET TYPE STP1806 ■ ■ ■ STP1806 VDSS 60 V RDS(on) < 0.
018 W ID 50 A TYPICAL RDS(on) = 0.
015 W EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 2 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process.
The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED ■ MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS ■ AUTOMOTIVE ■ TO-220 INTERNAL SCHEMATIC DIAGRAM Ordering Information SALES TYPE STP1806 MARKING P1806 PACKAGE TO-220 PACKAGING TUBE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(œ) Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kW) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max.
Operating Junction Temperature Value 60 60 ± 20 50 35 200 110 0.
73 7 350 -55 to 175 (2) Starting T j = 25 oC, ID = 25A, VDD = 30V (1) ISD ˆ50A, di/dt ˆ400A/µs, VDD ˆ V(BR)DSS, Tj ˆ TJMAX Unit V V V A A A W W/°C V/ns mJ °C (œ) Pulse width limited by safe operating area.
November 2004 Rev.
0.
1 1/9 STP1806 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 1.
36 62.
5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 20...


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