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QM3016D

UBIQ
Part Number QM3016D
Manufacturer UBIQ
Description N-Ch 30V Fast Switching MOSFETs
Published Jul 16, 2014
Detailed Description QM3016D N-Ch 30V Fast Switching MOSFETs General Description The QM3016D is the highest performance trench N-ch MOSFETs w...
Datasheet PDF File QM3016D PDF File

QM3016D
QM3016D

Overview
QM3016D N-Ch 30V Fast Switching MOSFETs General Description The QM3016D is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The QM3016D meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 30V Applications RDSON 4mΩ ID 96A z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch TO252 Pin Configuration D Absolute Maximum Ratings S G Rating Parameter Drain-Source Voltage Gate-Source Voltage 10s Steady State 30 ±20 1 1 1 1 Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Units V V A A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Avalanche Current Total Power Dissipation Total Power Dissipation 4 4 2 3 96 68 30 25 192 317 53.
8 62.
5 6 -55 to 175 -55 to 175 2.
42 19 16 A A A mJ A W W ℃ ℃ Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Thermal Resistance Junction-Case 1 Typ.
------- Max.
62 25 2.
4 Unit ℃/W ℃/W ℃/W Rev A.
01 D021011 1 QM3016D N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=30A VGS=4.
5V , ID=15A VGS=VDS , ID =250uA VDS=24V , VGS=0V , TJ=25℃ VDS=24V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=30A VDS=0V , VGS=...


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