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D1170

Part Number	D1170
Manufacturer	Inchange Semiconductor
Description	2SD1170
Published	Aug 13, 2014
Detailed Description	www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD...
Datasheet	D1170 PDF File

Overview

www.
DataSheet4U.
com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1170 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·High DC Current Gain: hFE= 2000( Min.
) @(IC= 3A, VCE= 2V) ·Low Collector Saturation Voltage: VCE(sat)= 1.
5V(Max)@ (IC= 3A, IB= 3mA) B APPLICATIONS ·Driver for solenoid,motor and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i .
w VALUE 120 V 120 V 6 V 6 A 10 A 1 A UNIT n c .
i m e IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature PC 50 W TJ 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.
iscsemi.
cn www.
DataSheet4U.
com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTI...

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