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IRF3205H

nELL
Part Number IRF3205H
Manufacturer nELL
Description N-Channel Power MOSFET
Published Sep 12, 2014
Detailed Description SEMICONDUCTOR IRF3205 Series N-Channel Power MOSFET (110A, 55Volts) RoHS RoHS Nell High Power Products DESCRIPTION T...
Datasheet PDF File IRF3205H PDF File

IRF3205H
IRF3205H

Overview
SEMICONDUCTOR IRF3205 Series N-Channel Power MOSFET (110A, 55Volts) RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF3205 is a three-terminal silicon device with current conduction capability of 110A, fast switching speed, low on-state resistance, breakdown voltage rating of 55V, and max.
threshold voltage of 4 volts.
They are designed as an extremely efficient and reliable device for use in a wide variety of applications.
These transistors can be operated directly from integrated circuits.
D D G G D S TO-220AB (IRF3205A) D S FEATURES RDS(ON) = 0.
010Ω @ VGS = 10V Ultra low gate charge(150nC max.
) Low reverse transfer capacitance (C RSS = 210pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature TO-263(D2PAK) (IRF3205H) D (Drain) PRODUCT SUMMARY ID (A) ID (A), Package Limited VDSS (V) RDS(ON) (Ω) QG(nC) max.
110 75 55 0.
010 @ V GS = 10V 150 G (Gate) S (Source) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL VDSS V DGR V GS ID I DM I AR E AR dv/dt PD TJ T STG TL PARAMETER Drain to Source voltage Drain to Gate voltage Gate to Source voltage V GS =10V, T C =25°C Continuous Drain Current (Note 1) TEST CONDITIONS T J =25°C to 150°C R GS =20KΩ VALUE 55 55 ±20 110 80 UNIT V V GS =10V, T C =100°C Pulsed Drain current(Note 2) Avalanche current(Note 2) Repetitive avalanche energy(Note 2 ) Peak diode recovery dv/dt(Note 3) Total power dissipation Derating factor above 25 ° C Operation junction temperature Storage temperature Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw 1.
6mm from case T C =25°C A 390 62 20 5 200 1.
3 -55 to 175 -55 to 175 300 10 (1.
1) lbf .
in (N .
m) ºC mJ V /ns W W /°C Note: 1.
Calculated continuous current based on maximum allowable junction temperature.
Package limitation current is 75 A .
2 .
Repetitive rating: pulse width limited by junction temperature.
3 .
I SD ≤ 62 A, di/dt ≤ 207 A/µs, V DD ≤ V (B...


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