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BTB100

SEMIWILL
Part Number BTB100
Manufacturer SEMIWILL
Description BI-DIRECTIONAL TRIODE THYRISTOR
Published Sep 24, 2014
Detailed Description BTA100-BTB100 100A SERIES BI-DIRECTIONAL TRIODE THYRISTOR DESCRIPTION General purpose switching and phase control appli...
Datasheet PDF File BTB100 PDF File

BTB100
BTB100

Overview
BTA100-BTB100 100A SERIES BI-DIRECTIONAL TRIODE THYRISTOR DESCRIPTION General purpose switching and phase control applications .
These devices are intended to be interfaced directly to microcontrollers , logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control , lighting control and static switching relay.
T2 G T1 SCHEMATIC SYMBOL TO-247 FEATURES • Repetitive Peak off-State Voltage: 600V/800V/1200V/1600V • R.
M.
S On-State Current(I T(RMS)=100A) • Low on-state voltage: V TM =1.
55(Max.
)@ I TM • Low reverse and forward blocking current: • High Commutation dV/dt.
T1 T2 G PACKAGE ABSOLUTE MAXIMUM RATINGS ( T J = 25°C UNLESS OTHERWISE SPECIFIED ) Symbol VDRM VRRM IT(RMS) ITSM I t d I/ d t PGM PG(AV) IGM TJ TSTG 2 Parameter Repetitive Peak Off- State Voltage Repetitive Peak Reverse Voltage R.
M.
S On-State Current Surge On-State Current I t for Fusing Repetitive rate of rise of on-state current after triggering Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Peak Gate Current Operating Junction Temperature Storage Temperature 2 Condition Ratings 600/800/1200/1600 600/800/1200/1600 Units V V A A AS A/uS W W A °C °C 2 All Conduction Angle F=50Hz, tp = 20ms tp= 10ms I G =2 I GT F=100Hz tr≤100n S 100 1000 2100 50 5.
0 1.
0 8.
0 - 40~ 125 - 40~ 150 05081.
R11 2/11 REV.
1205B2 Page 11 Page www.
protekdevices.
com www.
semiwill.
com BTA100-BTB100 ELECTRICAL CHARACTERISTICS ( TC = 25 °C UNLESS OTHERWISE NOTED ) Symbol Items Conditions T C = 25 °C IDRM VTM IGT V GT V GD dv/dt IH IL Repetitive Peak Off-State Current Peak On-State Voltage Gate Trigger Current Gate Trigger Voltage Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage Holding Current Latching current I G = 1.
2I GT DRM Ratings ≤50 ≤10000 ≤1.
55 ≤50 ≤1.
3 ≥0.
2 ≥500 ≤80 ⅠⅢ Ⅱ Unit V D = V DRM T C = 125 °C I TM = 120A ⅠⅡⅢ uA V mA V V V/ uS mA mA V D = 12V Ⅳ V D =12V V D =2/3VDRM, TJ = 125°C , V D = 2/3V TJ = 125...


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