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B945

Panasonic Semiconductor
Part Number B945
Manufacturer Panasonic Semiconductor
Description 2SB945
Published Oct 9, 2014
Detailed Description Power Transistors 2SB945 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 0.7±0.1 10.0±0....
Datasheet PDF File B945 PDF File

B945
B945

Overview
Power Transistors 2SB945 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 0.
7±0.
1 10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2 Unit: mm 4.
2±0.
2 s Features q q q q Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –130 –80 –7 –10 –5 40 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 7.
5±0.
2 16.
7±0.
3 φ3.
1±0.
1 4.
0 1.
4±0.
1 1.
3±0.
2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 14.
0±0.
5 0.
8±0.
1 0.
5 +0.
2 –0.
1 2.
54±0.
25 5.
08±0.
5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf IC = –2A, IB1 = – 0.
2A, IB2 = 0.
2A Conditions VCB = –100V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.
1A VCE = –2V, IC = –2A IC = –4A, IB = – 0.
2A IC = –4A, IB = – 0.
2A VCE = –10V, IC = – 0.
5A, f = 10MHz 30 0.
13 0.
5 0.
13 –80 45 90 260 – 0.
5 –1.
5 V V MHz µs µs µs min typ max –10 –50 Unit µA µA V FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 Note: Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification.
1 Power Transistors PC — Ta 50 –8 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) –7 IB=–120mA TC=25˚C 2SB945 IC — VCE Collector to emitter sa...


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