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D1272

Panasonic Semiconductor
Part Number D1272
Manufacturer Panasonic Semiconductor
Description 2SD1272
Published Oct 10, 2014
Detailed Description Power Transistors 2SD1272 Silicon NPN triple diffusion planar type For high-speed switching and high current amplificat...
Datasheet PDF File D1272 PDF File

D1272
D1272


Overview
Power Transistors 2SD1272 Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio 0.
7±0.
1 10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2 Unit: mm 4.
2±0.
2 s Features q q q High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 200 150 6 2.
5 1 0.
1 40 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C 7.
5±0.
2 16.
7±0.
3 φ3.
1±0.
1 4.
0 14.
0±0.
5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 1.
4±0.
1 1.
3±0.
2 Solder Dip 0.
8±0.
1 0.
5 +0.
2 –0.
1 2.
54±0.
25 5.
08±0.
5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency (TC=25˚C) Symbol ICBO IEBO VCEO hFE* VCE(sat) fT Conditions VCB = 200V, IE = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.
2A IC = 0.
5A, IB = 0.
02A VCE = 4V, IC = 0.
1A, f = 10MHz 25 150 500 2000 1 V MHz min typ max 100 100 Unit µA µA V *h FE Rank classification Q P Rank hFE 500 to 1200 800 to 2000 1 Power Transistors PC — Ta 50 0.
5 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C IB=400µA 350µA 300µA 0.
3 250µA 200µA 0.
2 150µA 100µA 0.
1 50µA 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 2SD1272 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 10 VCE(sat) — IC IC/IB=25 Collector power dissipation PC (W) Collector current IC (A) 40 (1) 0.
4 3 TC=100˚C 30 1 0.
3 25˚C 20 –25˚C 0.
1 10 (2) (3) (4) 0.
03 0 0.
01 0.
01 0...


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