DatasheetsPDF.com

2SC2130

JIANGSU CHANGJIANG
Part Number 2SC2130
Manufacturer JIANGSU CHANGJIANG
Description NPN Transistor
Published Oct 12, 2014
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC2130 TRANSISTOR (...
Datasheet PDF File 2SC2130 PDF File

2SC2130
2SC2130

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC2130 TRANSISTOR (NPN) 1.
EMITTER FEATURES z High DC Current Gain 2.
COLLECTOR 3.
BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 45 40 5 0.
8 600 208 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE Cob fT Test conditions Min 45 40 5 0.
1 0.
1 0.
1 100 320 0.
5 0.
8 13 100 V V pF MHz Typ Max Unit V V V μA μA μA IC= 0.
1mA,IE=0 IC=10mA,IB=0 IE=0.
1mA,IC=0 VCB=35V,IE=0 VCE=25V,IB=0 VEB=5V,IC=0 VCE=1V, IC=100mA IC=500mA,IB=20mA VCE=1V, IC=10mA VCB=10V,IE=0, f=1MHz VCE=5V,IC=10mA CLASSIFICATION OF hFE RANK RANGE O 100-200 Y 160-320 B,Mar,2012 Typical Characteristics 150 2SC2130 hFE —— IC VCE= 1V Ta=100 C o Static Characteristic 500uA COMMON EMITTER Ta=25℃ 400uA hFE DC CURRENT GAIN 300uA 250uA 200uA 500 (mA) 450uA 400 100 IC 350uA COLLECTOR CURRENT 300 200 50 Ta=25 C 100 o 150uA 100uA IB=50uA 0 0 1 2 3 4 5 6 0 0.
01 0.
1 1 10 100 800 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) 1.
2 VBEsat —— IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=25 300 VCEsat —— β=25 IC 1.
0 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 0.
8 Ta=25℃ 200 0.
6 0.
4 Ta=100℃ 100 Ta=100℃ Ta=25℃ 0.
2 0.
0 0.
1 1 10 100 800 0 0.
1 1 10 100 800 COLLECTOR CURRENT IC (m...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)