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MUR8100E

Part Number MUR8100E
Manufacturer Harris
Title 700V - 1000V Ultrafast Diodes
Description MUR870E, MUR880E, MUR890E, MUR8100E and RUR870, RUR880, RUR890, RUR8100 are ultrafast dual diodes (tRR 75ns) with soft recovery characteristics....
Features
• Ultrafast with Soft Recovery Characteristic (tRR 75ns)
• +175 C Rated Junction Temperature
• Reverse Voltage Up to 1000V
• Avalanche Energy Rated o Applications
• Switching Power Supply
• Power Switching Circuits
• General Purpose Symbol K Description MUR870E, MUR880E, MUR890E, MUR8100E and R...

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MUR8100 : MUR8100 Ultra Fast Recovery Diodes C A Dimensions TO-220AC A C Dim. A B C D E F G H J K L M N Q C(TAB) A=Anode, C=Cathode, TAB=Cathode MUR8100 VRSM V 1000 VRRM V 1000 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol IFRMS IFAVM IFRM Test Conditions TVJ=TVJM TC=100oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(.

MUR8100 : MUR880 thru MUR8100 SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 8.0 A, 800 V − 1000 V ® RoHS compliant TO-220AC Unit : inch (mm) • 20 mJ Avalanche Energy Guaranteed • Excellent Protection Against Voltage Transients in Switching • • • • • • • • • Inductive Load Circuits Ultrafast 75 Nanosecond Recovery Time 175°C Operating Junction Temperature Popular TO−220 Package Epoxy Meets UL 94 V−0 @ 0.125 in. Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Reverse Voltage to 1000 V Pb−Free Packages are Available* Features 4 O • Case: Epoxy, Molded • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • Lead Tem.

MUR8100 : MUR840 THRU MUR8100 SPECIFICATIONS Rev. A 8 Amp Ultra Fast Glass Passivated Rectifier 400 to 1000 Volts PRODUCT FEATURES 1. FLAMMABILITY CLASSIFICATION: 94V-0 2. GLASS PASSIVATED CHIP JUNCTION 3. LOW LEAKAGE 4. HIGH SURGE CURRENT CAPABILITY 5. ULTRA FAST SWITCHING 6. CASE: TRANSFER MOLDED, TO-220AC 7. POLARITY: AS MARKED 8. WEIGHT: 2.05 GRAMS 9. LEADS: SOLDERABILITY PER MIL-STD-202 METHOD 208 10. RoHS/HALOGEN FREE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED STORAGE AND OPERATING TEMPERATURE RANGE -55°C TO +150°C. SINGLE PHASE, HALF WAVE, 60 HZ, RESISTIVE OR INDUCTIVE LOAD. FOR CAPACITIVE LOAD, DERATE CURRENT BY 20%. RATING.

MUR8100 : MUR820, MUR860, MUR8100 Ultra Fast Recovery Diodes C(TAB) A A C C A=Anode, C=Cathode, TAB=Cathode MUR820 MUR860 MUR8100 VRSM V 200 600 1000 VRRM V 200 600 1000 Dimensions TO-220AC Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 - 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 - 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol Test Conditions IFRMS IFAVM IFRM IFSM I2t TVJ=TVJM TC=115oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited .

MUR8100D : Ultrafast Recovery Rectifier FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching power supplies and other power Switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) 1000 V 8 A Peak Repetitive Forward Current IFM (Rated VR,Square Wave,20kHz) 16 A Nonrepetitive Peak Surge C.

MUR8100E : Ultrafast Recovery Rectifier FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching power supplies and other power Switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) 1000 V 8 A Peak Repetitive Forward Current IFM (Rated VR,Square Wave,20kHz) 16 A Nonrepetitive Peak Surge .

MUR8100E : Data Sheet MUR8100E, RURP8100 November 2013 8 A, 1000 V Ultrafast Diodes The MUR8100E, RUR8100 is an ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial application. Ordering Information PART NUMBER PACKAGE BRAND MUR8100E TO-220AC MU8100 RURP8100 TO-220AC RURP8100 NOTE: When ordering, use entire part number. Symbol K Features • Ultrafast Recovery trr = 100 ns (@ IF = 8 A) • Max Forward Voltage, VF = 1.8 V (@ TC = 25°C) • 1000 V Reverse Voltage and High Reliabilit.

MUR8100E : MUR8100E, MUR880E MUR8100E is a Preferred Device SWITCHMODE™ Power Rectifiers Ultrafast “E’’ Series with High Reverse Energy Capability http://onsemi.com The MUR8100 and MUR880E diodes are designed for use in switching power supplies, inverters and as free wheeling diodes. Features ULTRAFAST RECTIFIERS 8.0 A, 800 V − 1000 V 1 4 3 4 • 20 mJ Avalanche Energy Guaranteed • Excellent Protection Against Voltage Transients in Switching • • • • • • • • • Inductive Load Circuits Ultrafast 75 Nanosecond Recovery Time 175°C Operating Junction Temperature Popular TO−220 Package Epoxy Meets UL 94 V−0 @ 0.125 in. Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Revers.

MUR8100E : only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com.

MUR8100E : MUR880 thru MUR8100 SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 8.0 A, 800 V − 1000 V ® RoHS compliant TO-220AC Unit : inch (mm) • 20 mJ Avalanche Energy Guaranteed • Excellent Protection Against Voltage Transients in Switching • • • • • • • • • Inductive Load Circuits Ultrafast 75 Nanosecond Recovery Time 175°C Operating Junction Temperature Popular TO−220 Package Epoxy Meets UL 94 V−0 @ 0.125 in. Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Reverse Voltage to 1000 V Pb−Free Packages are Available* Features 4 O • Case: Epoxy, Molded • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • Lead Tem.

MUR8100E : MUR870E-MUR8100E High-reliability discrete products and engineering services since 1977 8 AMP ULTRA FAST RECTIFIER FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage Average rectified forward current (Rated VR) (1) Peak repetitive forward current (Rated VR) square wave, 20 kHz Non-repetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60Hz) Operating and storage junction temperature r.




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