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K3473

Toshiba Semiconductor
Part Number K3473
Manufacturer Toshiba Semiconductor
Description 2SK3473
Published Oct 14, 2014
Detailed Description www.DataSheet4U.com 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3473 Switching Reg...
Datasheet PDF File K3473 PDF File

K3473
K3473

Overview
www.
DataSheet4U.
com 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3473 Switching Regulator Applications Unit: mm • • • • Low drain-source ON resistance: RDS (ON) = 1.
3Ω (typ.
) High forward transfer admittance: |Yfs| = 6.
5S (typ.
) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement-mode: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 9 27 150 413 9 15 150 -55~150 A W mJ A mJ °C °C Unit V V V Pulse (t = 1 ms) (Note 1) Drain power dissipati...


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