DatasheetsPDF.com

STD660

SamHop Microelectronics
Part Number STD660
Manufacturer SamHop Microelectronics
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Published Oct 15, 2014
Detailed Description Green Product STU/D660 Ver 2.0 SamHop Microelectronics Corp. N-Channel Logic Level Enhancement Mode Field Effect Tran...
Datasheet PDF File STD660 PDF File

STD660
STD660


Overview
Green Product STU/D660 Ver 2.
0 SamHop Microelectronics Corp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 90V ID 5A RDS(ON) (mΩ) Max 724 1014 @VGS=10V @VGS=4.
5V FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
ESD Protected.
D G S G D G S STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c Limit 90 ±20 TC=25°C TC=70°C 5 4 14 4 TC=25°C TC=70°C 42 27 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 50 °C/W °C/W Details are subject to change without notice.
Apr,16,2013 1 www.
samhop.
com.
tw STU/D660 Ver 2.
0 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=72V , VGS=0V 90 1 ±10 V uA uA VGS= ±20V , VDS=0V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance b VDS=VGS , ID=250uA VGS=10V , ID=2.
5A VGS=4.
5V , ID=2.
2A VDS=10V , ID=2.
5A 1 1.
9 579 751 3 137 19 12 3 724 1014 V m ohm m ohm S pF pF pF DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge b VDS=25V,VGS=0V f=1.
0MHz VDD=45V ID=1A VGS=10V RGEN= 6 ohm VDS=45V,ID=2.
5A,VGS=10V VDS=45V,ID=2.
5A, VGS=10V 14 13.
5 121 32 2.
73 0.
68...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)