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STS3419

SamHop Microelectronics
Part Number STS3419
Manufacturer SamHop Microelectronics
Description P-Channel Enhancement Mode Field Effect Transistor
Published Oct 16, 2014
Detailed Description Green Product STS3419 Ver 2.2 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRO...
Datasheet PDF File STS3419 PDF File

STS3419
STS3419

Overview
Green Product STS3419 Ver 2.
2 S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -30V ID -3.
8A R DS(ON) (m Ω) Max 65 @ VGS=-10V 90 @ VGS=-4.
5V FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
Halogen free.
S OT -23 D S G G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed c a c Limit -30 ±20 TA=25°C TA=70°C TA=25°C TA=70°C -3.
8 -3.
0 -14 a Units V V A A A W W °C Maximum Power Dissipation 1.
25 0.
8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 °C/W Details are subject to change without notice.
May,16,2014 1 www.
samhop.
com.
tw STS3419 Ver 2.
2 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-24V , VGS=0V Min Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance b -30 -1 ±100 uA nA VGS= ±20V , VDS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-1.
7A VGS=-4.
5V , ID=-1.
4A VDS=-5V , ID=-1.
7A -1.
0 -1.
6 50 75 5.
6 -2.
5 65 90 V m ohm m ohm S DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) tr tD(OFF) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge b VDS=-15V,VGS=0V f=1.
0MHz 500 95 74 pF pF pF VDD=-15V ID=-1A VGS=-10V RGEN= 6 ohm VDS=-15V,ID=-1.
7A,VGS=-10V VDS=-15V,ID=-1.
7A,VGS=-4.
5V VDS=-15V,ID=-1.
7A, VGS=-10V 11 13 18 36 10 5 0.
83 2.
85 ns ns ns ns nC nC nC nC DRAIN-SOURCE DIODE CHARACTER...


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