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C4139

Sanken
Part Number C4139
Manufacturer Sanken
Description 2SC4139
Published Oct 17, 2014
Detailed Description 2SC4139 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maxim...
Datasheet PDF File C4139 PDF File

C4139
C4139


Overview
2SC4139 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4139 500 400 10 15(Pulse30) 5 120(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) 5.
0±0.
2 15.
6±0.
4 9.
6 2.
0 1.
8 4.
8±0.
2 2.
0±0.
1 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=8A IC=8A, IB=1.
6A IC=8A, IB=1.
6A VCE=12V, IE=–1.
5A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.
5max 1.
3max 10typ 85typ (Ta=25°C) 2SC4139 Unit µA µA V V MHz pF 20.
0min 19.
9±0.
3 4.
0 a b ø3.
2±0.
1 4.
0max V 2 3 1.
05 +0.
2 -0.
1 0.
65 +0.
2 -0.
1 1.
4 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 25 IC (A) 8 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.
8 IB2 (A) –1.
6 ton (µs) 1max tstg (µs) 3max tf (µs) 0.
5max 5.
45±0.
1 B C E 5.
45±0.
1 Weight : Approx 6.
0g a.
Type No.
b.
Lot No.
I C – V CE Characteristics (Typical) 15 1.
5A V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) (I C /I B =5) 1.
5 I C – V BE Temperature Characteristics (Typical) 10 (V C E =4V) 1 .
2 A 800 mA Collector Current I C (A) 600mA 8 V B E (sat) 1.
0 –55˚C (Cas ase 25˚C (C 125˚C 10 e Temp) Temp) Temp ) em p) ˚C eT Collector Current I C (A) 6 mp) 400m A Temp (Case 25˚C ) 25 125 as ˚C ( 5 I B =100mA 12 5˚ C ( 2 5 –5 ˚C V C E (sat) 0 0.
03 0.
05 0.
1 0.
5 1 5 0 0 1 2 3 4 10 20 0 0 0.
2 0.
4 0.
6 0.
8 –55˚C C (Case 200mA 0.
5 Cas (Case 4 Temp) e Te 1.
0 1.
2 Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V) (V C E =4V) 50 8 θ j- a (˚ C/W) h FE – I C Characteristics (Typical) 125˚C DC C urrent G ain h FE t on •t stg • t f – I C Characteristics (Typical) t o n• t ...


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