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MJ15015 Datasheet PDF


Part Number MJ15015
Manufacturer SavantIC
Title Silicon NPN Power Transistors
Description ·With TO-3 package ·Complement to type MJ15016 ·Excellent safe operating area APPLICATIONS ·For high power audio ,stepping motor and other linear ...
Features e specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gai...

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Datasheet MJ15015 PDF File








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MJ15011 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ15011/D Advance Information Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed for high–power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc–to–dc converters or inverters. • High Safe Operating Area (100% Tested) 1.2 A @ 100 V • Completely Characterized for Linear Operation • High DC Current Gain and Low Saturation Voltage hFE = 20 (Min) @ 2 A, 2 V VCE(sat) = 2.5 V (Max) @ IC = 4 A, IB = 0.4 A • For Low Distortion Complementary Designs MJ15011* PNP MJ15012* *Moto.

MJ15011 : www.DataSheet4U.com MJ15011 (NPN), MJ15012 (PNP) Preferred Devices Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed for high−power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters or inverters. http://onsemi.com • High Safe Operating Area (100% Tested) 1.2 A @ 100 V • Completely Characterized for Linear Operation • High DC Current Gain and Low Saturation Voltage • • hFE = 20 (Min) @ 2 A, 2 V VCE(sat) = 2.5 V (Max) @ IC = 4 A, IB = 0.4 A For Low Distortion Complementary Designs Pb−Free Packages are Available* .

MJ15011 : ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 20(Min.)@IC = 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max)@ IC = 4A ·Complement to the PNP MJ15012 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, disk head positioners , and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCEO(SUS) Collector-Emitter Voltage 250 VCEX Collector-Emitter Voltage 250 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 10 ICM Co.

MJ15012 : ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 20(Min.)@IC = -2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max)@ IC = -4A ·Complement to the NPN MJ15011 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, disk head positioners , and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCEO(SUS) Collector-Emitter Voltage -250 VCEX Collector-Emitter Voltage -250 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -10 .

MJ15012 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ15011/D Advance Information Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed for high–power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc–to–dc converters or inverters. • High Safe Operating Area (100% Tested) 1.2 A @ 100 V • Completely Characterized for Linear Operation • High DC Current Gain and Low Saturation Voltage hFE = 20 (Min) @ 2 A, 2 V VCE(sat) = 2.5 V (Max) @ IC = 4 A, IB = 0.4 A • For Low Distortion Complementary Designs MJ15011* PNP MJ15012* *Moto.

MJ15012 : www.DataSheet4U.com MJ15011 (NPN), MJ15012 (PNP) Preferred Devices Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed for high−power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters or inverters. http://onsemi.com • High Safe Operating Area (100% Tested) 1.2 A @ 100 V • Completely Characterized for Linear Operation • High DC Current Gain and Low Saturation Voltage • • hFE = 20 (Min) @ 2 A, 2 V VCE(sat) = 2.5 V (Max) @ IC = 4 A, IB = 0.4 A For Low Distortion Complementary Designs Pb−Free Packages are Available* .

MJ15015 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055A/D Complementary Silicon High-Power Transistors PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc–to–dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055 and MJ2955. 2N3055A MJ15015* MJ2955A PNP MJ15016* *Motorola Preferred Device NPN ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ.

MJ15015 : 2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) Complementary Silicon High-Power Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055. Features • High Current−Gain − Bandwidth • Safe Operating Area • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N3055AG MJ15015G, MJ15016G VCEO Vdc 60 120 Collector−Base Voltage 2N3055AG MJ1.

MJ15015 : ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 20-70@IC = 4A,VCE= 4V ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to the PNP MJ15016 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, stepping motor and other linear applications, and can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters,inverters and etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEV VCEO Collector-Base Voltage Collector-Emitter Voltage Base Reversed Biased Collector-Emitter Voltage 200 V 200 V 120 V VEBO Emitter-Base V.

MJ15015 : The MJ15015 (NPN) and MJ15016 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications. Features: D High Safe Operating Area D High Current−Gain − Bandwidth Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . 120V Collector−Emitter Voltage Base, VCEV 200V Collector−Base Voltage, VCBO .

MJ15015G : 2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) Complementary Silicon High-Power Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055. Features • High Current−Gain − Bandwidth • Safe Operating Area • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N3055AG MJ15015G, MJ15016G VCEO 60 120 Vdc Collector−Base Voltage 2N3055AG MJ15.

MJ15016 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055A/D Complementary Silicon High-Power Transistors PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc–to–dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055 and MJ2955. 2N3055A MJ15015* MJ2955A PNP MJ15016* *Motorola Preferred Device NPN ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ.

MJ15016 : 2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) Complementary Silicon High-Power Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055. Features • High Current−Gain − Bandwidth • Safe Operating Area • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N3055AG MJ15015G, MJ15016G VCEO Vdc 60 120 Collector−Base Voltage 2N3055AG MJ1.

MJ15016 : ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 20-70@IC = -4A,VCE= -4V ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1 V(Max)@ IC = -4A ·Complement to the NPN MJ15015 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, stepping motor and other linear applications, and can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters,inverters and etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -15 .

MJ15016 : The MJ15015 (NPN) and MJ15016 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications. Features: D High Safe Operating Area D High Current−Gain − Bandwidth Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . 120V Collector−Emitter Voltage Base, VCEV 200V Collector−Base Voltage, VCBO .

MJ15016G : 2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) Complementary Silicon High-Power Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055. Features • High Current−Gain − Bandwidth • Safe Operating Area • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N3055AG MJ15015G, MJ15016G VCEO 60 120 Vdc Collector−Base Voltage 2N3055AG MJ15.




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