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PTZ27B Datasheet PDF


Part Number PTZ27B
Manufacturer Rohm
Title Zener diode
Description PTZ Series Diodes Zener diode PTZ Series !Applications 1) Voltage regulation and voltage limiting. 2) Voltage surge absorption. !External dimensi...
Features 1) Small surface mounting type. (PMDS) 2) 1W of power can be obtained despite compact size. 3) High surge withstand level. 0.1 +0.02 −0.1 0∼0.1 2.0±0.2 2.6±0.2 !Construction Silicon epitaxial planar ROHM : PMDS EIAJ : − JEDEC : SOD-106 Model name (voltage rank) Date of manufacture Ex. 1999.12...

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PTZ10.x : w w U Diodes 4 t e e Zener diode h S a PTZ Series at .D w m o .c PTZ Series zApplications 1) Voltage regulation and voltage limiting. 2) Voltage surge absorption. zExternal dimensions (Units : mm) 1.5±0.2 CATHODE MARK zFeatures 1) Small surface mounting type. (PMDS) 2) 1W of power can be obtained despite compact size. 3) High surge withstand level. 0∼0.1 2.6±0.2 zConstruction Silicon epitaxial planar ROHM : PMDS EIAJ : − JEDEC : SOD-106 zAbsolute maximum ratings (Ta=25°C) Parameter Power dissipation ∗ Junction temperature Storage temperature Symbol P Tj Tstg Limits 1 150 −55∼+150 ∗ Mounting density of other power components should be taken into consideration when laying out th.

PTZ10B : TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 PTZ3.6B - PTZ36B VZ : 3.6 - 36 Volts PD : 1.0 Watts FEATURES : * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free SURFACE MOUNT SILICON ZENER DIODES SMA 1.3 ± 0.2 5.3 ± 0.35 4.2 ± 0.25 2.3 ± 0.2 1.6 ± 0.25 2.6 ± 0.15 MECHANICAL DATA : * Case : SMA Molded plastic * Epoxy : UL94V-O rate flame retardant * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.060 gram (Approximately) 1.6 ± 0.25 Dimensions in millimeters MAXIMUM RATINGS Rating at 25 °C ambient temperature unless otherwise specified Rating Power Dissipation Junction Temperature Storage Temperature.

PTZ10B : PTZ Series Diodes Zener diode PTZ Series !Applications 1) Voltage regulation and voltage limiting. 2) Voltage surge absorption. !External dimensions (Units : mm) 1.5±0.2 CATHODE MARK 4.5±0.2 1.2±0.3 !Features 1) Small surface mounting type. (PMDS) 2) 1W of power can be obtained despite compact size. 3) High surge withstand level. 0.1 +0.02 −0.1 0∼0.1 2.0±0.2 2.6±0.2 !Construction Silicon epitaxial planar ROHM : PMDS EIAJ : − JEDEC : SOD-106 Model name (voltage rank) Date of manufacture Ex. 1999.12→9.C !Absolute maximum ratings (Ta=25°C) Parameter Power dissipation ∗ Junction temperature Storage temperature Symbol P Tj Tstg Limits 1 150 −55~+150 Unit W °C °C ∗ Mounting density.

PTZ10B : PTZ Series Zener diode Features 1. 1.0W power dissipation 2. For surface mounted applications 3. Zener voltage 3.6V to 36V Applications Voltage regulation Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Z-current Junction temperature Storage temperature range Test Conditions Tamb≤50℃ Type Symbol Pd IZM Tj Tstg Value 1 Pd/VZ 150 -55~+150 Unit W mA ℃ ℃ Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. Electrical Characteristics Tj=25℃ Parameter For.

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PTZ11B : PTZ Series Diodes Zener diode PTZ Series !Applications 1) Voltage regulation and voltage limiting. 2) Voltage surge absorption. !External dimensions (Units : mm) 1.5±0.2 CATHODE MARK 4.5±0.2 1.2±0.3 !Features 1) Small surface mounting type. (PMDS) 2) 1W of power can be obtained despite compact size. 3) High surge withstand level. 0.1 +0.02 −0.1 0∼0.1 2.0±0.2 2.6±0.2 !Construction Silicon epitaxial planar ROHM : PMDS EIAJ : − JEDEC : SOD-106 Model name (voltage rank) Date of manufacture Ex. 1999.12→9.C !Absolute maximum ratings (Ta=25°C) Parameter Power dissipation ∗ Junction temperature Storage temperature Symbol P Tj Tstg Limits 1 150 −55~+150 Unit W °C °C ∗ Mounting density.

PTZ11B : PTZ Series Zener diode Features 1. 1.0W power dissipation 2. For surface mounted applications 3. Zener voltage 3.6V to 36V Applications Voltage regulation Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Z-current Junction temperature Storage temperature range Test Conditions Tamb≤50℃ Type Symbol Pd IZM Tj Tstg Value 1 Pd/VZ 150 -55~+150 Unit W mA ℃ ℃ Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. Electrical Characteristics Tj=25℃ Parameter For.

PTZ11B : PTZ3.3B - PTZ36B SURFACE MOUNT SILICON ZENER DIODES VOLTAGE RANGE: 3.3 - 36V POWER: 1.0Wa t t s Features · Complete voltage range 3.3 to 36 volts · High peak reverse power dissipation · High reliability · Low leakage current · Standard zener voltage tolerance is ± 5%. Mechanical Data · Case : SMA (DO-214AC) Molded plastic · Epoxy : UL94V-O rate flame retardant · ead : Lead formed for Surface mount · Polarity : Color band denotes cathode end · Mounting position : Any · Weight: 0.064 grams (approx.) B A J H G E SMA(DO-214AC) Dim Min Max C A 2.29 2.92 B 4.00 4.60 C 1.27 1.63 D D 0.15 0.31 E 4.80 5.59 G 0.10 0.20 H 0.76 1.52 J 2.01 2.62 All Dimensions in mm Maximum Ra.

PTZ12.x : w w U Diodes 4 t e e Zener diode h S a PTZ Series at .D w m o .c PTZ Series zApplications 1) Voltage regulation and voltage limiting. 2) Voltage surge absorption. zExternal dimensions (Units : mm) 1.5±0.2 CATHODE MARK zFeatures 1) Small surface mounting type. (PMDS) 2) 1W of power can be obtained despite compact size. 3) High surge withstand level. 0∼0.1 2.6±0.2 zConstruction Silicon epitaxial planar ROHM : PMDS EIAJ : − JEDEC : SOD-106 zAbsolute maximum ratings (Ta=25°C) Parameter Power dissipation ∗ Junction temperature Storage temperature Symbol P Tj Tstg Limits 1 150 −55∼+150 ∗ Mounting density of other power components should be taken into consideration when laying out th.

PTZ12B : TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 PTZ3.6B - PTZ36B VZ : 3.6 - 36 Volts PD : 1.0 Watts FEATURES : * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free SURFACE MOUNT SILICON ZENER DIODES SMA 1.3 ± 0.2 5.3 ± 0.35 4.2 ± 0.25 2.3 ± 0.2 1.6 ± 0.25 2.6 ± 0.15 MECHANICAL DATA : * Case : SMA Molded plastic * Epoxy : UL94V-O rate flame retardant * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.060 gram (Approximately) 1.6 ± 0.25 Dimensions in millimeters MAXIMUM RATINGS Rating at 25 °C ambient temperature unless otherwise specified Rating Power Dissipation Junction Temperature Storage Temperature.

PTZ12B : PTZ Series Diodes Zener diode PTZ Series !Applications 1) Voltage regulation and voltage limiting. 2) Voltage surge absorption. !External dimensions (Units : mm) 1.5±0.2 CATHODE MARK 4.5±0.2 1.2±0.3 !Features 1) Small surface mounting type. (PMDS) 2) 1W of power can be obtained despite compact size. 3) High surge withstand level. 0.1 +0.02 −0.1 0∼0.1 2.0±0.2 2.6±0.2 !Construction Silicon epitaxial planar ROHM : PMDS EIAJ : − JEDEC : SOD-106 Model name (voltage rank) Date of manufacture Ex. 1999.12→9.C !Absolute maximum ratings (Ta=25°C) Parameter Power dissipation ∗ Junction temperature Storage temperature Symbol P Tj Tstg Limits 1 150 −55~+150 Unit W °C °C ∗ Mounting density.

PTZ12B : PTZ Series Zener diode Features 1. 1.0W power dissipation 2. For surface mounted applications 3. Zener voltage 3.6V to 36V Applications Voltage regulation Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Z-current Junction temperature Storage temperature range Test Conditions Tamb≤50℃ Type Symbol Pd IZM Tj Tstg Value 1 Pd/VZ 150 -55~+150 Unit W mA ℃ ℃ Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. Electrical Characteristics Tj=25℃ Parameter For.

PTZ12B : PTZ3.3B - PTZ36B SURFACE MOUNT SILICON ZENER DIODES VOLTAGE RANGE: 3.3 - 36V POWER: 1.0Wa t t s Features · Complete voltage range 3.3 to 36 volts · High peak reverse power dissipation · High reliability · Low leakage current · Standard zener voltage tolerance is ± 5%. Mechanical Data · Case : SMA (DO-214AC) Molded plastic · Epoxy : UL94V-O rate flame retardant · ead : Lead formed for Surface mount · Polarity : Color band denotes cathode end · Mounting position : Any · Weight: 0.064 grams (approx.) B A J H G E SMA(DO-214AC) Dim Min Max C A 2.29 2.92 B 4.00 4.60 C 1.27 1.63 D D 0.15 0.31 E 4.80 5.59 G 0.10 0.20 H 0.76 1.52 J 2.01 2.62 All Dimensions in mm Maximum Ra.

PTZ13.x : w w U Diodes 4 t e e Zener diode h S a PTZ Series at .D w m o .c PTZ Series zApplications 1) Voltage regulation and voltage limiting. 2) Voltage surge absorption. zExternal dimensions (Units : mm) 1.5±0.2 CATHODE MARK zFeatures 1) Small surface mounting type. (PMDS) 2) 1W of power can be obtained despite compact size. 3) High surge withstand level. 0∼0.1 2.6±0.2 zConstruction Silicon epitaxial planar ROHM : PMDS EIAJ : − JEDEC : SOD-106 zAbsolute maximum ratings (Ta=25°C) Parameter Power dissipation ∗ Junction temperature Storage temperature Symbol P Tj Tstg Limits 1 150 −55∼+150 ∗ Mounting density of other power components should be taken into consideration when laying out th.

PTZ13B : TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 PTZ3.6B - PTZ36B VZ : 3.6 - 36 Volts PD : 1.0 Watts FEATURES : * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free SURFACE MOUNT SILICON ZENER DIODES SMA 1.3 ± 0.2 5.3 ± 0.35 4.2 ± 0.25 2.3 ± 0.2 1.6 ± 0.25 2.6 ± 0.15 MECHANICAL DATA : * Case : SMA Molded plastic * Epoxy : UL94V-O rate flame retardant * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.060 gram (Approximately) 1.6 ± 0.25 Dimensions in millimeters MAXIMUM RATINGS Rating at 25 °C ambient temperature unless otherwise specified Rating Power Dissipation Junction Temperature Storage Temperature.




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