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D2276

Panasonic Semiconductor
Part Number D2276
Manufacturer Panasonic Semiconductor
Description 2SD2276
Published Jan 6, 2015
Detailed Description Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington 2.0 4.0 2.0 3.0 For power amplification ...
Datasheet PDF File D2276 PDF File

D2276
D2276

Overview
Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington 2.
0 4.
0 2.
0 3.
0 For power amplification Complementary to 2SB1503 s Features q Optimum for 110W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): <2.
5V 26.
0±0.
5 10.
0 6.
0 20.
0±0.
5 Unit: mm φ 3.
3±0.
2 5.
0±0.
3 3.
0 1.
5 1.
5 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VCBO VCEO VEBO ICP IC PC 160 140 5 15 8 120 3.
5 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V A A W ˚C ˚C 20.
0±0.
5 2.
5 Solder Dip 2.
0±0.
3 3.
0±0.
3 1.
0±0.
2 1.
5 2.
7±0.
3 0.
6±0.
2 5.
45±0.
3 10.
9±0.
5 123 1:Base 2:Collector 3:Emitter TOP–3L Package Internal Connection C B E s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf VCB = 160V, IE = 0 VCE = 140V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 7A IC = 7A, IB = 7mA IC = 7A, IB = 7mA VCE = 10V, IC = 0.
5A, f = 1MHz IC = 7A, IB1 = 7mA, IB2 = –7mA, VCC = 50V min 140 2000 5000 typ max Unit 100 µA 100 µA 100 µA V 30000 2.
5 V 3.
0 V 20 MHz 2.
0 µs 6.
0 µs 1.
2 µs *hFE2 Rank classification Rank Q S P hFE2 5000 to 15000 7000 to 21000 8000 to 30000 1 Collector power dissipation PC (W) Power Transistors 200 150 (1) 100 PC — Ta (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.
5W) Collector to emitter saturation voltage VCE(sat) (V) 50 (2) (3) 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta ...


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