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J297

Hitachi
Part Number J297
Manufacturer Hitachi
Description Silicon P-Channel MOSFET
Published Jan 25, 2015
Detailed Description 2SJ297(L), 2SJ297(S) Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • Hi...
Datasheet PDF File J297 PDF File

J297
J297

Overview
2SJ297(L), 2SJ297(S) Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline LDPAK 4 123 D G S 4 12 3 1.
Gate 2.
Drain 3.
Source 4.
Drain November 1996 2SJ297(L), 2SJ297(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Valu...


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