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K3497

Part Number	K3497
Manufacturer	Toshiba
Description	2SK3497
Published	Jan 27, 2015
Detailed Description	www.DataSheet4U.com 2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3497 High Power Amp...
Datasheet	K3497 PDF File

Overview

www.
DataSheet4U.
com 2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3497 High Power Amplifier Application Unit: mm High breakdown voltage: VDSS = 180V Complementary to 2SJ618 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 180 Gate−source voltage VGSS ±12 Drain current DC (Note ) Pulse (Note ) ID IDP 10 30 Drain power dissipation (Tc = 25°C) PD 130 Channel temperature Tch 150 Storage temperature range Tstg −55~150 Note: Ensure that the channel temperature does not exceed 150°C.
V V A A W °C °C Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, chan...

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