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C3074

Toshiba Semiconductor
Part Number C3074
Manufacturer Toshiba Semiconductor
Description 2SC3074
Published Jan 28, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 2SC3074 High Current Switching Applications Unit:...
Datasheet PDF File C3074 PDF File

C3074
C3074

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.
4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.
0 μs (typ.
) • Complementary to 2SA1244 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 5 A Base current IB 1 A Collector power dissipation Ta = 25°C Tc = 25°C PC 1.
0 W 20 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA ― ― Note: Using continuously under h...


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