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J304

Toshiba
Part Number J304
Manufacturer Toshiba
Description 2SJ304
Published Feb 11, 2015
Detailed Description 2SJ304 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV) 2SJ304 DC−DC Converter, Relay Drive and ...
Datasheet PDF File J304 PDF File

J304
J304

Overview
2SJ304 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV) 2SJ304 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.
) z High forward transfer admittance : |Yfs| = 8.
0 S (typ.
) z Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) z Enhancement mode : Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse(Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD Tch Tstg −60 −60 ±20 −14 −56 40 150 −55 to 150 V V V A W °C °C JEDEC ― JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.
9 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 3.
125 62.
5 °C / W °C / W Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2009-09-29 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer a...


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