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K1626

Hitachi Semiconductor
Part Number K1626
Manufacturer Hitachi Semiconductor
Description 2SK1626
Published Feb 28, 2015
Detailed Description 2SK1626, 2SK1627 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High sp...
Datasheet PDF File K1626 PDF File

K1626
K1626

Overview
2SK1626, 2SK1627 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline TO-220FM D 12 3 1.
Gate G 2.
Drain 3.
Source S 2SK1626, 2SK1627 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1626 2SK1627 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 450 500 ±30 5 20 5 35 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1626, 2SK1627 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage 2SK1626 V(BR)DSS 2SK1627 450 500 Gate to source breakdown voltage V(BR)GSS ±30 Gate to source leak current I GSS Zero gate voltage 2SK16...


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