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2SB1038

Part Number	2SB1038
Manufacturer	INCHANGE
Description	Silicon PNP Power Transistor
Published	Mar 2, 2015
Detailed Description	isc Silicon PNP Power Transistor 2SB1038 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Low...
Datasheet	2SB1038 PDF File

Overview

isc Silicon PNP Power Transistor 2SB1038 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.
) ·Low Collector Saturation Voltage : VCE(sat)= -1.
5V(Max)@IC= -2A ·Complement to Type 2SD1310 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -5 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction...

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