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20N60C5

IXYS
Part Number 20N60C5
Manufacturer IXYS
Description Power MOSFET
Published Mar 9, 2015
Detailed Description IXKH 20N60C5 IXKP 20N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gat...
Datasheet PDF File 20N60C5 PDF File

20N60C5
20N60C5

Overview
IXKH 20N60C5 IXKP 20N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge ID25 = 20 A VDSS = 600 V R =DS(on) max 0.
2 Ω D TO-247 AD (IXKH) G S G D S TO-220 AB (IXKP) q D(TAB) MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = 6.
6 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0.
.
.
480 V Maximum Ratings 600 V ± 20 V 20 A 13 A 435 mJ 0.
66 mJ 50 V/ns Symbol RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.
typ.
max.
VGS = 10 V; ID = 10 A VDS = VGS; ID = 1.
1 mA VDS = 600 V; VGS = 0 V VGS = ± 20 V; VDS = 0 V VGS = 0 V; VDS = 100 V f = 1 MHz TVJ = 25°C TVJ = 125°C VGS = 0 to 10 V; VDS = 400 V; ID = 10 A VGS = 10 V; VDS = 400 V ID = 10 A; RG = 3.
3 Ω 180 2.
5 3 10 1520 72 32 8 11 10 5 50 5 200 mΩ 3.
5 V 1 µA µA 100 nA pF pF 45 nC nC nC ns ns ns ns 0.
60 K/W G D...


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