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4N60F

Part Number	4N60F
Manufacturer	GFD
Description	600V N-Channel MOSFET
Published	Mar 11, 2015
Detailed Description	600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. Th...
Datasheet	4N60F PDF File

Overview

600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction.
electronic lamp ballasts based on half bridge topology.
4N60/4N60F VDSS RDS(ON) ID 600V 2.
5Ω 4A Features • 4A, 600V, RDS(on) = 2.
5Ω @VGS = 10 V • Low gate charge ( typical 16nC) • Fast switching • 100% avalanche tested • Improved dv/dt capability Ordering Information PART NUMBER PACKAGE BRAND 4N60/4N60F TO-220/220F 0GFD www.
goford...

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