MCC
omponents 21201 Itasca Street Chatsworth
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Features
• With TO-3P(I) package • Recommended for 60~80W high-fidelity frequency amplifier output
stage
Maximum Ratings
Symbol
VCEO VCBO VEBO
IC PC TJ TSTG
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature
Rating 150 150 5. 0 12 120
-55 to +150 -55 to +150
Unit
V V
V A
W OC OC
2SD845
NPN Silicon Power Transistors
TO-3P(I)
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Min Max Units
V(BR)CEO Collector-Emitter Breakdown Voltage (IC=50mAdc, IB=0)
ICBO Collector-Base Cutoff Current (VCB=150Vdc,IE=0)
IEBO Emitter-Base Cutoff Current (VEB=5. 0Vdc, IC=0)
ON CHARACTERISTICS
150 -----
--- Vdc 50 uAdc 50 uAdc
hFE V CE(sat)
Forward Current Transfer ratio (IC=1. 0Adc, VCE=5. 0Vdc)
Collector-Emitter Satur...
D845 PDF File
