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K1119

Toshiba Semiconductor
Part Number K1119
Manufacturer Toshiba Semiconductor
Description 2SK1119
Published Mar 18, 2015
Detailed Description 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) 2SK1119 DC−DC Converter and Motor Drive ...
Datasheet PDF File K1119 PDF File

K1119
K1119

Overview
2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.
5) 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.
0 Ω (typ.
) z High forward transfer admittance : |Yfs| = 2.
0 S (typ.
) z Low leakage current : IDSS = 300 µA (max) (VDS = 800 V) z Enhancement mode : Vth = 1.
5~3.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD Tch Tstg 1000 1000 ±20 4 12 100 150 −55~150 V V V A W °C °C JEDEC TO-220AB JEITA SC-46 TOSHIBA 2-10P1B Weight: 2.
0 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 1.
25 83.
3 °C / W °C / W Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2006-11-09 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance R...


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