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BD633

INCHANGE
Part Number BD633
Manufacturer INCHANGE
Description Silicon NPN Power Transistor
Published Apr 7, 2015
Detailed Description isc Silicon NPN Power Transistor BD633 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 25mA ·Collector-Emitter Br...
Datasheet PDF File BD633 PDF File

BD633
BD633

Overview
isc Silicon NPN Power Transistor BD633 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.
)@ IC= 25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min.
) ·Complement to Type BD634 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 5 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
3 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Colle...


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