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B649A

Part Number	B649A
Manufacturer	JCST
Description	PNP Transistor
Published	Apr 7, 2015
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PN...
Datasheet	B649A PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1.
EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2.
COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -180 V 3.
BASE VCEO Collector-Emitter Voltage 2SB649 -120 V 2SB649A -160 VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -1.
5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ BDTICELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol T...

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