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B1116

JCST
Part Number B1116
Manufacturer JCST
Description PNP Transistor
Published Apr 15, 2015
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SB1116/1116A TRANSISTOR (PNP)...
Datasheet PDF File B1116 PDF File

B1116
B1116

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-92 Plastic-Encapsulate Transistors 2SB1116/1116A TRANSISTOR (PNP) TO-92 FEATURES · High Collector Power Dissipation .
· Complementary to 2SD1616/2SD1616A 1.
EMITTER 2.
COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3.
BASE Symbol Parameter Value Unit VCBO Collector-Base Voltage 2SB1116 2SB1116A -60 -80 V VCEO Collector-Emitter Voltage 2SB1116 2SB1116A -50 -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 0.
75 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 2SB1116 2SB1116A Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base -emitter sa...


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