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20N60S1

Fuji Electric
Part Number 20N60S1
Manufacturer Fuji Electric
Description N-Channel enhancement mode power MOSFET
Published Apr 22, 2015
Detailed Description FMP20N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhanceme...
Datasheet PDF File 20N60S1 PDF File

20N60S1
20N60S1


Overview
FMP20N60S1 Super J-MOS series http://www.
fujielectric.
com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET 2.
7 ±0.
1 6.
4 ±0.
2 15 ± 0.
2 Features Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) Outline Drawings [mm] TO-220 3.
6± 0.
2 10 +0.
5 0 4.
5±0.
2 1.
3±0.
2 Applications UPS Server Telecom Power conditioner system Power supply 3.
6 ±0.
2 13.
5 min.
1.
2 ± 0.
2 1 2.
54 ± 0.
2 23 0.
8 +0.
2 -0.
1 2.
54± 0.
2 PRE-SOLDER 0.
4 +0.
2 0 2.
7±0.
2 1 23 CONNECTION 1 GATE 2 DRAIN 3 SOURCE JEDEC : TO-220AB DIMENSIONS ARE IN MILLIMETERS.
Maximum Ratings and Characteristics Absolute Maximum Ratings at TC=25°C (unless otherwise specified) Description Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt IDP VGS IAR EAS dVDS/dt dV/dt -di/dt Maximum Power Dissipation PD Operating and Storage Temperature range Note *1 : Limited by maximum channel temperature.
Note *2 : Tch≤150°C, See Fig.
1 and Fig.
2 Note *3 : Starting Tch=25°C, IAS=2A, L=216mH, VDD=60V, RG=50Ω, See Fig.
1 and Fig.
2 EAS limited by maximum channel temperature and avalanche current.
Note *4 : IF≤-ID, -di/dt=100A/μs, VDD≤400V, Tch≤150°C.
Note *5 : IF≤-ID, dV/dt=15kV/μs, VDD≤400V, Tch≤150°C.
Tch Tstg Characteristics 600 600 ±20 ±12.
6 ±60 ±30 6.
6 472.
2 50 15 100 2.
02 150 150 -55 to +150 Equivalent circuit schematic Drain(D) Gate(G) Source(S) Unit V V A A A V A mJ kV/μs kV/μs A/μs W °C °C Remarks VGS=-30V Tc=25°C Tc=100°C Note*1 Note*1 Note *2 Note *3 VDS≤ 600V Note *4 Note *5 Ta=25°C TC=25°C 1 FMP20N60S1 FUJI POWER MOSFET http://www.
fujielectric.
com/products/semiconductor/ Electrical Characteristics at TC=25°C (unless otherwise specified) Static Ratings Description Drain-Source Breakdown ...



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