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KBU1004G

Taiwan Semiconductor
Part Number KBU1004G
Manufacturer Taiwan Semiconductor
Description Standard Bridge Rectifier
Published May 20, 2015
Detailed Description KBU1001G – KBU1007G Taiwan Semiconductor 10A, 50V - 1000V Standard Bridge Rectifier FEATURES ● Glass passivated chip j...
Datasheet PDF File KBU1004G PDF File

KBU1004G
KBU1004G


Overview
KBU1001G – KBU1007G Taiwan Semiconductor 10A, 50V - 1000V Standard Bridge Rectifier FEATURES ● Glass passivated chip junction ● Ideal for printed circuit board ● High case dielectric strength ● Typical IR less than 0.
1μA ● High surge current capability ● UL Recognized File # E-326243 ● RoHS Compliant APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● Lighting application KEY PARAMETERS PARAMETER VALUE UNIT IF VRRM 10 A 50 - 1000 V IFSM TJ MAX Package 200 A 150 °C KBU Configuration Quad MECHANICAL DATA ● Case: KBU ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A whisker test ● Mounting torque: 0.
56 N⋅m maximum ● Polarity: As marked ● Weight: 7.
20g (approximately) KBU ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current, 8.
3ms single half sine-wave superimposed on rated load Rating for fusing (t<8.
3ms) KBU KBU KBU KBU KBU KBU KBU SYMBOL UNIT 1001G 1002G 1003G 1004G 1005G 1006G 1007G KBU KBU KBU KBU KBU KBU KBU 1001G 1002G 1003G 1004G 1005G 1006G 1007G VRRM 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 700 V IF 10 A IFSM 200 A I2t 166 A2s Junction temperature TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version: J2103 KBU1001G – KBU1007G Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance Junction-to-case thermal resistance SYMBOL RӨJA RӨJC TYP 25 2.
2 UNIT °C/W °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL Forward voltage per diode(1) IF = 5A, TJ = 25°C VF IF = 10A, TJ = 25°C Reverse current @ rated VR per diode(2) TJ = 25°C IR TJ = 125°C Junction capacitance per diode Notes: 1.
Pulse test with PW = 0.
3ms 2.
Pulse test with PW = 30ms 1...


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