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D2536

Toshiba

2SD2536

2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2536 Switching Applications Micr...


Toshiba

D2536

File Download Download D2536 Datasheet


Description
2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.2 V (max) (IC = 0.7 A, VBH = 4.2 V) Zener diode included between collector and base Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 85 V Collector-emitter voltage VCEO 100 ± 15 V Emitter-base voltage VEBO 6 V Bias voltage VB 20 V Collector current IC 2 A Base current IB 0.5 A JEDEC TO-92MOD Collector power dissipation PC 0.9 W JEITA ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C TOSHIBA 2-5J1A Weight: 0.36 g (typ.) Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit BASE RB 3.6 kΩ COLLECTOR ≈ 5 kΩ ≈ 300 Ω EMITTER 1 http:/...




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