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K1690

Sanyo
Part Number K1690
Manufacturer Sanyo
Description 2SK1690
Published May 29, 2015
Detailed Description Ordering number:EN4223 Features · Low ON resistance. · Ultrahigh-speed switching. N-Channel Silicon MOSFET 2SK1690 Ultr...
Datasheet PDF File K1690 PDF File

K1690
K1690

Overview
Ordering number:EN4223 Features · Low ON resistance.
· Ultrahigh-speed switching.
N-Channel Silicon MOSFET 2SK1690 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SK1690] 10.
2 4.
5 1.
3 11.
5 1.
6 0.
9 11.
0 8.
8 unit:mm 2090A 20.
9 9.
4 1.
2 0.
8 123 2.
55 2.
55 2.
7 0.
4 1 : Gate 2 : Drain 3 : Source SANYO : SMP [2SK1690] 10.
2 4.
5 1.
3 1.
5max 8.
8 3.
0 9.
9 0.
8 1.
4 12 0.
8 2.
55 3 1.
2 2.
55 2.
55 2.
55 2.
7 1.
35 0 to 0.
3 0.
4 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.
,Ltd.
Semiconductor Company TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61599TH (KT)/70193TH (KOTO) BX-0293 No.
4223–1/4 2SK1690 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Tc=25°C Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 Zero-Gate Votlage Drain Current IDSS VDS=450V, VGS=0 Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0 Cutoff V...


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