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K1530

Part Number	K1530
Manufacturer	Toshiba
Description	2SK1530
Published	May 29, 2015
Detailed Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 2SK1530 High-Power Amplifier Application High brea...
Datasheet	K1530 PDF File

Overview

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 2SK1530 High-Power Amplifier Application High breakdown voltage High forward transfer admittance Complementary to 2SJ201 : VDSS = 200V : |Yfs| = 5.
0 S (typ.
) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Gate−source voltage Drain current (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range Symbol VDSS VGSS ID PD Tc Tstg Rating 200 ±20 12 150 150 −55~150 Marking Unit V V A W °C °C TOSHIBA 2SK1530 JAPAN Part No.
(or abbreviation code) Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F1...

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