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K2266

Toshiba Semiconductor
Part Number K2266
Manufacturer Toshiba Semiconductor
Description 2SK2266
Published Jun 5, 2015
Detailed Description 2SK2266 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2266 Chopper Regulator, DC–DC Convert...
Datasheet PDF File K2266 PDF File

K2266
K2266

Overview
2SK2266 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2266 Chopper Regulator, DC–DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 22 mΩ (typ.
) l High forward transfer admittance : |Yfs| = 27 S (typ.
) l Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) l Enhancement−mode : Vth = 0.
8~2.
0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 45 180 65 246 45 6.
5 150 −55~150 Unit V V V A W mJ A mJ °C °C JEDEC ― JEITA ― TOSHIBA 2-10S1B Weight: 1.
5 g (typ.
) Thermal Characteristics Characteristics S...


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