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AP4435

Advanced Power Electronics
Part Number AP4435
Manufacturer Advanced Power Electronics
Description 30 P-Channel Enhancement-Mode MOSFET
Published Jun 6, 2015
Detailed Description 30 P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-9.1A = 21m RDS(ON), Vgs@-4.5V, Ids@-6.9A = 35m Ad...
Datasheet PDF File AP4435 PDF File

AP4435
AP4435

Overview
30 P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-9.
1A = 21m RDS(ON), Vgs@-4.
5V, Ids@-6.
9A = 35m Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance AP4435 Preliminary Data Sheet S0-8 Internal Schematic Diagram Drain Gate Top View Source P-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA = 25 oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS ID Limit -30 ±20 -7 Pulsed Drain Current 1) Maximum Power Dissipation TA = 25oC TA = 75oC IDM PD -50 1.
5 0.
9 Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (P...


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