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NCE05N65L

NCE Power Semiconductor
Part Number NCE05N65L
Manufacturer NCE Power Semiconductor
Description N-Channel Super Junction Power MOSFET
Published Jun 8, 2015
Detailed Description NCE05N65L N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction ...
Datasheet PDF File NCE05N65L PDF File

NCE05N65L
NCE05N65L

Overview
NCE05N65L N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge.
This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant VDS RDS(ON) ID 650 900 5 V mΩ A Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE05N65L TO-251S NCE05N65L Table 1.
Absolute Maximum Ratings (TC=25℃) Parameter Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Continuous Drain Current at Tc=25°C Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 480 V, ID = 5 A, Tj = 125 °C Maximum Power Dissipation(Tc=25℃) Derate above 25°C Single pulse avalanche energy (Note2) Avalanche current(Note 1) Symbol VDS VGS ID (DC) ID (DC) IDM (pluse) dv/dt PD EAS IAR Wuxi NCE Power Semiconductor Co.
, Ltd Page 1 TO-251S NCE05N65L 650 ±30 5 3 15 50 50 0.
4 130 5 Unit V V A A A V/ns W W/°C mJ A http://www.
ncepower.
com v1.
2 NCE05N65L Parameter Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) Operating Junction and Storage Temperature Range Table 2.
Thermal Characteristic Parameter Thermal Resistance，Junction-to-Case（Maximum） Thermal Resistance，Junction-to-Ambient （Maximum） Symbol EAR TJ,TSTG Symbol RthJC RthJA NCE05N65L 0.
4 -55.
.
.
+150 NCE05N65L 2.
5 75 Unit mJ °C Unit °C /W °C /W Table 3.
Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition On/off states Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain ...


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