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C3076

Toshiba
Part Number C3076
Manufacturer Toshiba
Description 2SC3076
Published Jun 8, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Power Switching Applica...
Datasheet PDF File C3076 PDF File

C3076
C3076

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Power Switching Applications 2SC3076 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.
0 μs (typ.
) • Complementary to 2SA1241 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 1 A Collector power dissipation Ta = 25°C Tc = 25°C PC 1.
0 W 10 Junction temperature Tj 150 °C JEDEC ― Storage temperature range Tstg −55 to 150 °C JEITA ― Note: Using continuously under heavy loads (e.
g.
the application of high TOSHIBA 2-7J1A temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the Weight: 0.
36 g (typ.
) reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Start of commercial production 1980-08 1 2013-11-01 2SC3076 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO VCB = 50 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 10 mA, IB = 0 hFE (1) (Note) VCE = 2 V, IC = 0.
5 A hFE (2) VCE = 2 V, IB = 1.
5 A VCE (sat) IC = 1 A, IB = 0.
05 A VBE (sat) IC = 1 A, IB = 0.
05 A fT VCE = 2 V, IC = 0.
5 A Cob VCB = 10 V, IE = 0, f = 1 MHz Min T...


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