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C5550

Toshiba
Part Number C5550
Manufacturer Toshiba
Description 2SC5550
Published Jun 11, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5550 High-Speed Switching Application for Inverter Lighting Syste...
Datasheet PDF File C5550 PDF File

C5550
C5550

Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5550 High-Speed Switching Application for Inverter Lighting System 2SC5550 Unit: mm • Suitable for RCC circuit (guaranteed small current hFE) : hFE = 13 (min) (IC = 1 mA) • High speed: tr = 0.
5 µs (max), tf = 0.
3 µs (max) (IC = 0.
24 A) • High breakdown voltage: VCEO = 400 V Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 400 400 7 1 2 0.
5 1.
5 10 150 −55 to 150 Unit V V V A A...


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