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D1220

Part Number	D1220
Manufacturer	Toshiba
Description	2SD1220
Published	Jun 13, 2015
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1220 2SD1220 Power Amplifier Applications Unit: mm • ...
Datasheet	D1220 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1220 2SD1220 Power Amplifier Applications Unit: mm • Complementary to 2SB905 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C VCBO VCEO VEBO IC IB PC 150 V 150 V 6V 1.
5 A 1.
0 A 1.
0 W 10 Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in JEDEC JEITA ― ― temperature, etc.
) may cause...

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