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BFS20


Part Number BFS20
Manufacturer KEC
Title EPITAXIAL PLANAR NPN TRANSISTOR
Description SEMICONDUCTOR TECHNICAL DATA BFS20/BF599 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. MAXIMUM RA...
Features r Voltage Transition Frequency Collector Output Capacitance BFS20 BF599 BFS20 BF599 BFS20 BF599 ICBO hFE VBE(ON) fT Cob TEST CONDITION IC=10ỌA, IE=0 IC=2mA, IB=0 IE=10ỌA, IC=0 VCB=20V, IE=0 VCB=20V, IE=0, Ta=150ᴱ VCB=40V, IE=0 VCE=10V, IC=7mA VCE=10V, IC=7mA VCE=10V, IC=7mA, f=100MHz VCB=10V, f=1...

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BFS20 : 3 3 1 2 DESCRIPTION NPN medium frequency transistor in a SOT23 plastic package. MARKING TYPE NUMBER BFS20 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − −65 − −65 MIN. MAX. 30 20 4 25 25 250 +1.

BFS20 : Elektronische Bauelemente BFS20 NPN Silicon Plastic-Encapsulate Transistor A suffix of "-C" specifies halogen & lead-free FEATURES High Fequency Application. VHF Band Amplifier application RoHS Compliant Product Power dissipation PCM : 0.25 W Collector Current ICM : 25mA Collector-base voltage V(BR)CBO : 30 V Operating & storage junction temperature Tj, Tstg : - 55OC ~ + 150O C 1 2 3 A L 3 Top View 12 VG Collector 3 1 Base 2 Emitter BS C D H K J SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless .

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BFS20 : BFS20 NPN Silicon Epitaxial Planar Transistor High frequency transistor for IF and VHF applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 7 mA Collector Cutoff Current at VCB = 20 V Emitter Cutoff Current at VEB = 4 V Base Emitter Voltage at VCE = 10 V, IC = 7 mA Transition Frequency at VCE = 10 V, IC = 5 mA, f = 100 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz SOT-23 Plastic Package Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 30 20 4 25 200 15.

BFS20 : SMD Type Transistors NPN Medium Frequency Transistor KFS20(BFS20) Features Low current (max. 25 mA) Low voltage (max. 20 V) Very low feedback capacitance (typ. 350 fF). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector current IC Peak collector current ICM power dissipation PD Thermal resistance from junction to ambient * Rth j-a Junction temperature Tj Storage temperature Tstg * Transistor mounted on an FR4 printed-circuit board. R.

BFS20W : 3 DESCRIPTION 3 NPN medium frequency transistor in a SOT323 (SC-70) plastic package. MARKING 1 2 1 2 TYPE NUMBER BFS20W Note 1. ∗ = -: Made in Hong Kong. ∗ = t: Made in Malaysia. MARKING CODE(1) N1∗ Fig.1 Top view MAM062 Simplified outline (SOT323; SC-70) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Refer to SOT323 (SC-70) standard mounting conditions. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient t.

BFS23A : www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .

BFS25 : NPN transistor in a plastic SOT323 envelope. It is designed for use in RF amplifiers and oscillators in pagers and pocket phones with signal frequencies up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 170 °C; note 1 IC = 0.5 mA; VCE = 1 V; Tj = 25 °C IC = 1 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C Ic = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C Ic = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C open base CONDITIONS open emitter MIN. − − − − 50 3.5 − − TYP. − − − − 80 5 13 1.8 1 Top .

BFS25A : Code: N6 1 base 2 emitter 3 collector DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is designed for use in RF amplifiers and oscillators in pagers and pocket phones with signal frequencies up to 2 GHz. handbook, 2 columns 3 1 Top view 2 MBC870 Fig.1 SOT323. QUICK REFERENCE DATA SYMBOL PARAMETER VCBO VCEO IC Ptot hFE fT collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency GUM maximum unilateral power gain F noise figure CONDITIONS open emitter open base up to Ts = 170 C; note 1 IC = 0.5 mA; VCE = 1 V; Tj = 25 C IC = 1 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 C Ic = 0.5 mA; VCE = 1 V; f = 1.




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