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B1411

Toshiba
Part Number B1411
Manufacturer Toshiba
Description SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
Published Jun 25, 2015
Detailed Description TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1411 Switching Applications Hammer Drive, Pulse Motor Drive Appli...
Datasheet PDF File B1411 PDF File

B1411
B1411

Overview
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1411 Switching Applications Hammer Drive, Pulse Motor Drive Applications 2SB1411 Unit: mm • High DC current gain: hFE = 1500 (min) (VCE = −3 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.
5 V (max) (IC = −1 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −100 V Collector-emitter voltage VCEO −100 V Emitter-base voltage VEBO −7 V Collector current DC Peak IC −2 A ICP −3 Base current IB −0.
5 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2.
0 W 20 Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC ― JEITA SC-67 TOSHIBA 2-10R1A Weight: 1.
7 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions...


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