DatasheetsPDF.com

2SA795

INCHANGE
Part Number 2SA795
Manufacturer INCHANGE
Description Silicon PNP Power Transistor
Published Jul 3, 2015
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·Large Collector Power Dissipation ·High Collector-Emitter Breakdown Volta...
Datasheet PDF File 2SA795 PDF File

2SA795
2SA795


Overview
isc Silicon PNP Power Transistor DESCRIPTION ·Large Collector Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC1565 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.
5 A 10 W 150 ℃ Tstg Storage Tempera...



Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)