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BS170P

marutsu
Part Number BS170P
Manufacturer marutsu
Description N-channel MOSFET
Published Aug 2, 2015
Detailed Description N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 60 Volt VDS * RDS(on)=5Ω BS170P REFER TO ZVN...
Datasheet PDF File BS170P PDF File

BS170P
BS170P

Overview
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 60 Volt VDS * RDS(on)=5Ω BS170P REFER TO ZVN3306A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb =25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb =25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg D G S E-Line TO92 Compatible VALUE 60 270 3 ±20 625 -55 to +150 UNIT V mA A V mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
Drain-Source Breakdown Voltage BVDSS 60 V ID=100µA, VGS=0V Gate-Source Threshold Voltage VGS(th) 0.
8 3 V ID=1mA, VDS=VGS Gat...


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