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BC338

KEC
Part Number BC338
Manufacturer KEC
Description EPITAXIAL PLANAR NPN TRANSISTOR
Published Aug 3, 2015
Detailed Description SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current : IC=800mA. DC Cu...
Datasheet PDF File BC338 PDF File

BC338
BC338

Overview
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES High Current : IC=800mA.
DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA).
For Complementary with PNP type BC328.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IE PC Tj Tstg RATING 30 25 5 800 -800 625 150 -55 150 UNIT V V V mA mA mW L M C BC338 EPITAXIAL PLANAR NPN TRANSISTOR BC JA KE G D H FF 1 23 N DIM MILLIMETERS A 4.
70 MAX B 4.
80 MAX C 3.
70 MAX D 0.
45 E 1.
00 F 1.
27 G 0.
85 H 0.
45 J 14.
00 +_0.
50 K 0.
55 MAX L 2.
30 M 0.
45 MAX N 1.
00 1.
COLLECTOR 2.
BASE 3.
EMITTER TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current DC Current Gain (Note) Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO hFE VCE(sat) VBE(ON) fT VCB=25V, IE=0 VCE=1V, IC=100mA IC=500mA, IB=50mA VCE=1V, IC=300mA VCE=5V, IC=-10mA, f=100MHz Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 Note : hFE Classification none:100 630, 16:100 250, 25:160 400, 40:250 630 MIN.
- 100 - TYP.
- 100 12 MAX.
100 630 0.
7 1.
2 - UNIT nA V V MHz pF 2000.
2.
28 Revision No : 2 1/2 BC338 2000.
2.
28 Revision No : 2 2/2 ...


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