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ATP112

ON Semiconductor
Part Number ATP112
Manufacturer ON Semiconductor
Description P-Channel Power MOSFET
Published Aug 23, 2015
Detailed Description Ordering number : ENA1754A ATP112 P-Channel Power MOSFET –60V, –25A, 43mΩ, Single ATPAK http://onsemi.com Features • ...
Datasheet PDF File ATP112 PDF File

ATP112
ATP112

Overview
Ordering number : ENA1754A ATP112 P-Channel Power MOSFET –60V, –25A, 43mΩ, Single ATPAK http://onsemi.
com Features • ON-resistance RDS(on)1=33mΩ(typ.
) • 4V drive • Protection diode in • Input Capacitance Ciss=1450pF(typ.
) • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--10V, L=500μH, IAV=--13A *2 L≤500μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --60 ±20 --25 --75 40 150 --55 to +150 50 --13 Unit V V A A W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7057-001 6.
5 4 1.
5 0.
4 ATP112-TL-H 4.
6 2.
6 0.
4 Product & Package Information • Package : ATPAK • JEITA, JEDEC :- • Minimum Packing Quantity : 3,000 pcs.
/reel Packing Type: TL Marking ATP112 LOT No.
TL 6.
05 0.
7 4.
6 1.
7 7.
3 0.
5 9.
5 0.
5 0.
1 2 1 0.
8 3 0.
6 2.
3 2.
3 0.
55 0.
4 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK Electrical Connection 2,4 1 3 Semiconductor Components Industries, LLC, 2013 July, 2013 62012 TKIM/72110PA TKIM TC-00002329 No.
A1754-1/7 Electrical Characteristics at Ta=25°C ATP112 Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” C...


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